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Breakdown of the Static Approximation for Free Carrier Screening of Excitons in Monolayer Semiconductors

Glazov, Mikhail M. and Chernikov, Alexey (2018) Breakdown of the Static Approximation for Free Carrier Screening of Excitons in Monolayer Semiconductors. physica status solidi (b) 255 (12), p. 1800216.

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Other URL: http://doi.org/10.1002/pssb.201800216


Abstract

The authors address the problem of free carrier screening of exciton states in two‐dimensional monolayer semiconductors. Basic theoretical considerations are presented concerning the applicability of the commonly used static approximation of the screening effect and the implications are discussed. The authors show that the low‐frequency models leads to a major overestimation of the free carrier ...

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Item type:Article
Date:2018
Institutions:UNSPECIFIED
Projects:SFB 1277: Emergente relativistische Effekte in der Kondensierten Materie: Von grundlegenden Aspekten zu elektronischer Funktionalität
Identification Number:
ValueType
10.1002/pssb.201800216DOI
Keywords:excitons, free-carrier screening, transition-metal dichalcogenides, two-dimensional semiconduct
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Item ID:40521
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