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On the Fabrication of Graphene p-n Junctions and Their Application for Detecting Terahertz Radiation
Vasileva, G. Yu., Vasilyev, Yu. B., Novikov, S. N., Danilov, S. N. and Ganichev, S. D. (2018) On the Fabrication of Graphene p-n Junctions and Their Application for Detecting Terahertz Radiation. Semiconductors 52 (8), pp. 1077-1081.Date of publication of this fulltext: 18 Jul 2019 13:20
Article
DOI to cite this document: 10.5283/epub.40542
Abstract
A new method for the formation of lateral p-n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p-n junctions. Such p-n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p-n junctions are discussed.
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Details
| Item type | Article | ||||
| Journal or Publication Title | Semiconductors | ||||
| Publisher: | PLEIADES PUBLISHING INC | ||||
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| Place of Publication: | MOSCOW | ||||
| Volume: | 52 | ||||
| Number of Issue or Book Chapter: | 8 | ||||
| Page Range: | pp. 1077-1081 | ||||
| Date | August 2018 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev | ||||
| Identification Number |
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| Keywords | EPITAXIAL GRAPHENE; IRRADIATION; SIO2; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| URN of the UB Regensburg | urn:nbn:de:bvb:355-epub-405428 | ||||
| Item ID | 40542 |
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