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On the Fabrication of Graphene p-n Junctions and Their Application for Detecting Terahertz Radiation

Vasileva, G. Yu., Vasilyev, Yu. B., Novikov, S. N., Danilov, S. N. and Ganichev, S. D. (2018) On the Fabrication of Graphene p-n Junctions and Their Application for Detecting Terahertz Radiation. Semiconductors 52 (8), pp. 1077-1081.

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Other URL: https://doi.org/10.1134/S1063782618080225, https://link.springer.com/article/10.1134/S1063782618080225


Abstract

A new method for the formation of lateral p-n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p-n junctions. Such p-n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p-n junctions are discussed.


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Item type:Article
Date:August 2018
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Projects:SFB 1277: Emergente relativistische Effekte in der Kondensierten Materie: Von grundlegenden Aspekten zu elektronischer Funktionalität, GRK 1570, Elektronische Eigenschaften von Nanostrukturen auf Kohlenstoff-Basis
Identification Number:
ValueType
10.1134/S1063782618080225DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:40542
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