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On the Fabrication of Graphene p-n Junctions and Their Application for Detecting Terahertz Radiation

URN to cite this document:
urn:nbn:de:bvb:355-epub-405428
DOI to cite this document:
10.5283/epub.40542
Vasileva, G. Yu. ; Vasilyev, Yu. B. ; Novikov, S. N. ; Danilov, S. N. ; Ganichev, S. D.
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Date of publication of this fulltext: 18 Jul 2019 13:20


Abstract

A new method for the formation of lateral p-n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p-n junctions. Such p-n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p-n junctions are discussed.


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