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Defect reduced selectively grown GaN pyramids as template for green InGaN quantum wells

Wagner, J. ; Wächter, C. ; Wild, J. ; Müller, M. ; Metzner, S. ; Veit, P. ; Schmidt, G. ; Jetter, M. ; Bertram, F. ; Zweck, J. ; Christen, J. ; Michler, P.


We report the growth of green emitting InGaN quantum wells (QWs) by metal-organic vapor-phase epitaxy (MOVPE) on three-dimensional GaN templates. The {10 (1) over bar1} facets of GaN pyramids, fabricated by selective-area growth (SAG), reduce the influence of the quantum-confined Stark effect (QCSE) on the emission properties of the QW. The luminescence properties of a QW are a good indicator for ...


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