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Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures

Lohr, Matthias ; Schregle, Ralph ; Jetter, Michael ; Wächter, Clemens ; Müller-Caspary, Knut ; Mehrtens, Thorsten ; Rosenauer, Andreas ; Pietzonka, Ines ; Strassburg, Martin ; Zweck, Josef



Abstract

Piezoelectric and spontaneous polarization play an essential role in GaN-based devices. InGaN quantum wells (QWs) in GaN host material, especially grown along the polar c-direction, exhibit strong internal fields in the QW region due to the indium-induced strain. An exact knowledge of the electric fields is essential, since they are one of the factors limiting the performance of green LDs and ...

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