Influence of oval defects on transport properties in high-mobility two-dimensional electron gases
Article
Bockhorn, L., Velieva, A., Hakim, S., Wagner, T., Rugeramigabo, E. P., Schuh, D., Reichl, C., Wegscheider, W. and Haug, R. J.
(2016)
Influence of oval defects on transport properties in high-mobility two-dimensional electron gases.
Applied Physics Letters 108 (9), 092103.
Alternative links to fulltext
Involved Institutions
Details
| Item type | Article | ||||
| Journal or Publication Title | Applied Physics Letters | ||||
| Publisher | AMER INST PHYSICS | ||||
| Place of Publication | MELVILLE | ||||
| Volume | 108 | ||||
| Number of Issue or Book Chapter | 9 | ||||
| Page Range | 092103 | ||||
| Date | 2016 | ||||
| Date of publication | 17 Mar 2020 11:01 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard | ||||
| Identification Number |
| ||||
| Keywords | MOLECULAR-BEAM EPITAXY; ORIGIN; GROWTH; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 41887 |
Export bibliographical data
Owner only: item control page
Altmetric
Altmetric