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Influence of oval defects on transport properties in high-mobility two-dimensional electron gases

Bockhorn, L. ; Velieva, A. ; Hakim, S. ; Wagner, T. ; Rugeramigabo, E. P. ; Schuh, D. ; Reichl, C. ; Wegscheider, W. ; Haug, R. J.



Abstract

Rare macroscopic growth defects next to a two-dimensional electron gas influence transport properties and cause a negative magnetoresistance. On the basis of this, we show that the number of oval defects seen on the material surface is comparable with the density of macroscopic growth defects determined from the negative magnetoresistance. We examine several materials with different densities of ...

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