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Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions

Tóvári, Endre ; Makk, Péter ; Liu, Ming-Hao ; Rickhaus, Peter ; Kovács-Krausz, Zoltán ; Richter, Klaus ; Schönenberger, Christian ; Csonka, Szabolcs



Abstract

The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to the new conducting channels formed in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes ...

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