Opto-electronic characterization of three dimensional topological insulators
Plank, H., Danilov, S. N., Bel'kov, V. V., Shalygin, V. A., Kampmeier, J., Lanius, M., Mussler, G., Grützmacher, D. and Ganichev, S. D. (2016) Opto-electronic characterization of three dimensional topological insulators. Journal of Applied Physics 120 (16), p. 165301.Date of publication of this fulltext: 17 Mar 2020 12:07
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| Item type | Article | ||||
| Journal or Publication Title | Journal of Applied Physics | ||||
| Publisher: | AMER INST PHYSICS | ||||
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| Place of Publication: | MELVILLE | ||||
| Volume: | 120 | ||||
| Number of Issue or Book Chapter: | 16 | ||||
| Page Range: | p. 165301 | ||||
| Date | 2016 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev | ||||
| Identification Number |
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| Keywords | MOLECULAR-BEAM EPITAXY; SINGLE DIRAC CONE; THIN-FILMS; DEEP IMPURITIES; BI2TE3 FILMS; SURFACE; BI2SE3; TRANSPORT; SB2TE3; GROWTH; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 42896 |
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