Go to content
UR Home

Opto-electronic characterization of three dimensional topological insulators

Plank, H. ; Danilov, S. N. ; Bel'kov, V. V. ; Shalygin, V. A. ; Kampmeier, J. ; Lanius, M. ; Mussler, G. ; Grützmacher, D. ; Ganichev, S. D.


We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1-xSbx)(2)Te-3 based three dimensional (3D) topological insulators (TIs). In particular, measuring the polarization dependence of the photogalvanic current and ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons