Large, Tunable Valley Splitting and Single-Spin Relaxation Mechanisms in a Si/SixGe1-x Quantum Dot

URN to cite this document:: urn:nbn:de:bvb:355-epub-433477
DOI to cite this document:: 10.5283/epub.43347

Holland, Arne ; Struck, Tom ; Langrock, Veit ; Schmidbauer, Andreas ; Schauer, Floyd ; Leonhardt, Tim ; Sawano, Kentarou ; Riemann, Helge ; Abrosimov, Nikolay V. ; Bougeard, Dominique

; Schreiber, Lars R.

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Date of publication of this fulltext: 18 Jun 2020 07:36

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Abstract

Valley splitting is a key feature of silicon-based spin qubits. Quantum dots in Si/SixGe1-x heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 mu eV in a gate-defined single quantum dot, hosted in molecular-beam-epitaxy-grown ...