Mobility spectrum analysis on three-dimensional topological insulator BiSbTeSe2

URN to cite this document:: urn:nbn:de:bvb:355-epub-461454
DOI to cite this document:: 10.5283/epub.46145

Wang, Jimin

; Kurzendorfer, Alexander ; Chen, Lin

; Wang, Zhiwei

; Ando, Yoichi

; Xu, Yang ; Miotkowski, Ireneusz ; Chen, Yong P.

; Weiss, Dieter

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Date of publication of this fulltext: 08 Jul 2021 09:54

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Abstract

We conducted mobility spectrum analysis on a high quality three dimensional topological insulator film of BiSbTeSe2 to extract mobility mu and carrier density n. Top and bottom gates were applied to tune the carrier density on top and bottom surfaces independently. At 1.5K, when the conduction is entirely dominated by the Dirac surface states, we always find two dominant conduction channels (top ...