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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-461454
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.46145
Zusammenfassung
We conducted mobility spectrum analysis on a high quality three dimensional topological insulator film of BiSbTeSe2 to extract mobility mu and carrier density n. Top and bottom gates were applied to tune the carrier density on top and bottom surfaces independently. At 1.5K, when the conduction is entirely dominated by the Dirac surface states, we always find two dominant conduction channels (top ...
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