Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors

URN to cite this document:: urn:nbn:de:bvb:355-epub-463825
DOI to cite this document:: 10.5283/epub.46382

Lin, Kai-Qiang

; Faria Junior, Paulo E. ; Bauer, Jonas M. ; Peng, Bo

; Monserrat, Bartomeu ; Gmitra, Martin ; Fabian, Jaroslav

; Bange, Sebastian

; Lupton, John M.

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Date of publication of this fulltext: 15 Jul 2021 17:20

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Abstract

Twist-engineering of the electronic structure in van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal atoms at the center of the three-atom layer and are therefore not particularly susceptible to twisting. Here, we report that high-lying excitons in bilayer WSe2 ...