Go to content
UR Home

Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors

URN to cite this document:
DOI to cite this document:
Lin, Kai-Qiang ; Faria Junior, Paulo E. ; Bauer, Jonas M. ; Peng, Bo ; Monserrat, Bartomeu ; Gmitra, Martin ; Fabian, Jaroslav ; Bange, Sebastian ; Lupton, John M.
License: Creative Commons Attribution 4.0
PDF - Published Version
Date of publication of this fulltext: 15 Jul 2021 17:20


Twist-engineering of the electronic structure in van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal atoms at the center of the three-atom layer and are therefore not particularly susceptible to twisting. Here, we report that high-lying excitons in bilayer WSe2 ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons