Possible experimental realization of a basic Z2 topological semimetal in GaGeTe

URN to cite this document:: urn:nbn:de:bvb:355-epub-477741
DOI to cite this document:: 10.5283/epub.47774

Haubold, E. ; Fedorov, A. ; Pielnhofer, F. ; Rusinov, I. P. ; Menshchikova, T. V. ; Duppel, V. ; Friedrich, Daniel ; Weihrich, Richard ; Pfitzner, Arno

; Zeugner, A. ; Isaeva, A. ; Thirupathaiah, S. ; Kushnirenko, Y. ; Rienks, E. ; Kim, T. ; Chulkov, E. V. ; Büchner, B. ; Borisenko, S.

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Abstract

We report experimental and theoretical evidence that GaGeTe is a basic Z(2) topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the classic 3D topological insulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. ...