Zusammenfassung
Specific features in the formation of Landau levels in a three-dimensional topological insulator based on an 80-nm-thick strained mercury telluride film in an inclined magnetic field are studied. The magnetoresistance in the Hall bar geometry with a gate is measured at a temperature 1.9 K and in an applied magnetic field up to 10 T. The gate allows varying the Fermi level position from the ...
Nur für Besitzer und Autoren: Kontrollseite des Eintrags
Altmetric