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Quantitative scanning spreading resistance microscopy on n-type dopant diffusion profiles in germanium and the origin of dopant deactivation

Prüßing, Jan K. ; Hamdana, Gerry ; Bougeard, Dominique ; Peiner, Erwin ; Bracht, Hartmut


Diffusion profiles of arsenic and antimony in undoped and carbon doped germanium (Ge), respectively, were analysed by means of scanning spreading resistance microscopy (SSRM). Whereas earlier secondary ion mass spectrometry analyses have determined the distribution of the chemical concentration of dopants and carbon, the electrically active defect concentration is quantified by SSRM using ...


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