Quantitative scanning spreading resistance microscopy on n-type dopant diffusion profiles in germanium and the origin of dopant deactivation
Article
Prüßing, Jan K., Hamdana, Gerry, Bougeard, Dominique, Peiner, Erwin
and Bracht, Hartmut
(2019)
Quantitative scanning spreading resistance microscopy on n-type dopant diffusion profiles in germanium and the origin of dopant deactivation.
Journal of Applied Physics 125 (8), 085105.
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| Item type | Article | ||||
| Journal or Publication Title | Journal of Applied Physics | ||||
| Publisher | AMER INST PHYSICS | ||||
| Place of Publication | MELVILLE | ||||
| Volume | 125 | ||||
| Number of Issue or Book Chapter | 8 | ||||
| Page Range | 085105 | ||||
| Date | 2019 | ||||
| Date of publication | 03 Sep 2021 10:04 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard | ||||
| Identification Number |
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| Keywords | SURFACE-STATES; GE; SILICON; RESOLUTION; TRANSPORT; IMPLANTS; DEFECTS; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 48962 |
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