Time of carrier escape and recombination coefficients in InGaN quantum-well active regions of blue, cyan, and green light-emitting diodes
Reklaitis, I., Krencius, L., Malinauskas, T., Karpov, S. Yu, Lugauer, H. J., Pietzonka, I., Strassburg, M., Vitta, P. and Tomašiūnas, R. (2018) Time of carrier escape and recombination coefficients in InGaN quantum-well active regions of blue, cyan, and green light-emitting diodes. Semiconductor Science and Technology 34 (1), 015007.Date of publication of this fulltext: 03 Sep 2021 10:10
Article
Alternative links to fulltext
Involved Institutions
Details
| Item type | Article | ||||
| Journal or Publication Title | Semiconductor Science and Technology | ||||
| Volume: | 34 | ||||
|---|---|---|---|---|---|
| Number of Issue or Book Chapter: | 1 | ||||
| Page Range: | 015007 | ||||
| Date | 2018 | ||||
| Institutions | UNSPECIFIED | ||||
| Identification Number |
| ||||
| Dewey Decimal Classification | UNSPECIFIED | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 49230 |
Export bibliographical data
Owner only: item control page
Altmetric
Altmetric