Light-field-driven electronics in the mid-infrared regime: Schottky rectification

URN to cite this document:: urn:nbn:de:bvb:355-epub-531916
DOI to cite this document:: 10.5283/epub.53191

Schlecht, Maria T. ; Knorr, Matthias ; Schmid, Christoph P. ; Malzer, Stefan ; Huber, Rupert

; Weber, Heiko B.

License: Creative Commons Attribution 4.0
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Date of publication of this fulltext: 14 Nov 2022 09:30

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Abstract

The speed of an active electronic semiconductor device is limited by RC timescale, i.e., the time required for its charging and discharging. To circumvent this ubiquitous limitation of conventional electronics, we investigate diodes under intense mid-infrared light-field pulses. We choose epitaxial graphene on silicon carbide as a metal/semiconductor pair, acting as an ultrarobust and ...