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Lin, Kai-Qiang ; Ziegler, Jonas D. ; Semina, Marina A. ; Mamedov, Javid V. ; Watanabe, Kenji ; Taniguchi, Takashi ; Bange, Sebastian ; Chernikov, Alexey ; Glazov, Mikhail M. ; Lupton, John M.

High-lying valley-polarized trions in 2D semiconductors

Lin, Kai-Qiang , Ziegler, Jonas D., Semina, Marina A. , Mamedov, Javid V., Watanabe, Kenji , Taniguchi, Takashi, Bange, Sebastian , Chernikov, Alexey, Glazov, Mikhail M. und Lupton, John M. (2022) High-lying valley-polarized trions in 2D semiconductors. Nature Communications 13, art.no. 6980.

Veröffentlichungsdatum dieses Volltextes: 28 Nov 2022 08:15
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.53224


Zusammenfassung

Here, the authors observe tightly bound, valley-polarized, UV-emissive trions in monolayer transition metal dichalcogenide transistors. These are quasiparticles composed of an electron from a high-lying conduction band with negative effective mass, a hole from the first valence band, and an additional charge from a band-edge state. Optoelectronic functionalities of monolayer transition-metal ...

Here, the authors observe tightly bound, valley-polarized, UV-emissive trions in monolayer transition metal dichalcogenide transistors. These are quasiparticles composed of an electron from a high-lying conduction band with negative effective mass, a hole from the first valence band, and an additional charge from a band-edge state. Optoelectronic functionalities of monolayer transition-metal dichalcogenide (TMDC) semiconductors are characterized by the emergence of externally tunable, correlated many-body complexes arising from strong Coulomb interactions. However, the vast majority of such states susceptible to manipulation has been limited to the region in energy around the fundamental bandgap. We report the observation of tightly bound, valley-polarized, UV-emissive trions in monolayer TMDC transistors: quasiparticles composed of an electron from a high-lying conduction band with negative effective mass, a hole from the first valence band, and an additional charge from a band-edge state. These high-lying trions have markedly different optical selection rules compared to band-edge trions and show helicity opposite to that of the excitation. An electrical gate controls both the oscillator strength and the detuning of the excitonic transitions, and therefore the Rabi frequency of the strongly driven three-level system, enabling excitonic quantum interference to be switched on and off in a deterministic fashion.



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Details

DokumentenartArtikel
Titel eines Journals oder einer ZeitschriftNature Communications
Verlag:Nature
Ort der Veröffentlichung:BERLIN
Band:13
Seitenbereich:art.no. 6980
Datum15 November 2022
InstitutionenPhysik > Institut für Experimentelle und Angewandte Physik > Lehrstuhl Professor Lupton > Arbeitsgruppe John Lupton
Projekte
Gefördert von: Deutsche Forschungsgemeinschaft (DFG) (314695032)
Identifikationsnummer
WertTyp
10.1038/s41467-022-33939-wDOI
Stichwörter / KeywordsGENERATION; COHERENCE
Dewey-Dezimal-Klassifikation500 Naturwissenschaften und Mathematik > 530 Physik
StatusVeröffentlicht
BegutachtetJa, diese Version wurde begutachtet
An der Universität Regensburg entstandenZum Teil
URN der UB Regensburgurn:nbn:de:bvb:355-epub-532246
Dokumenten-ID53224

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