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High-lying valley-polarized trions in 2D semiconductors
Lin, Kai-Qiang
, Ziegler, Jonas D., Semina, Marina A.
, Mamedov, Javid V., Watanabe, Kenji
, Taniguchi, Takashi, Bange, Sebastian
, Chernikov, Alexey, Glazov, Mikhail M.
und Lupton, John M.
(2022)
High-lying valley-polarized trions in 2D semiconductors.
Nature Communications 13, art.no. 6980.
Veröffentlichungsdatum dieses Volltextes: 28 Nov 2022 08:15
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.53224
Zusammenfassung
Here, the authors observe tightly bound, valley-polarized, UV-emissive trions in monolayer transition metal dichalcogenide transistors. These are quasiparticles composed of an electron from a high-lying conduction band with negative effective mass, a hole from the first valence band, and an additional charge from a band-edge state. Optoelectronic functionalities of monolayer transition-metal ...
Here, the authors observe tightly bound, valley-polarized, UV-emissive trions in monolayer transition metal dichalcogenide transistors. These are quasiparticles composed of an electron from a high-lying conduction band with negative effective mass, a hole from the first valence band, and an additional charge from a band-edge state. Optoelectronic functionalities of monolayer transition-metal dichalcogenide (TMDC) semiconductors are characterized by the emergence of externally tunable, correlated many-body complexes arising from strong Coulomb interactions. However, the vast majority of such states susceptible to manipulation has been limited to the region in energy around the fundamental bandgap. We report the observation of tightly bound, valley-polarized, UV-emissive trions in monolayer TMDC transistors: quasiparticles composed of an electron from a high-lying conduction band with negative effective mass, a hole from the first valence band, and an additional charge from a band-edge state. These high-lying trions have markedly different optical selection rules compared to band-edge trions and show helicity opposite to that of the excitation. An electrical gate controls both the oscillator strength and the detuning of the excitonic transitions, and therefore the Rabi frequency of the strongly driven three-level system, enabling excitonic quantum interference to be switched on and off in a deterministic fashion.
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| Dokumentenart | Artikel | ||||
| Titel eines Journals oder einer Zeitschrift | Nature Communications | ||||
| Verlag: | Nature | ||||
|---|---|---|---|---|---|
| Ort der Veröffentlichung: | BERLIN | ||||
| Band: | 13 | ||||
| Seitenbereich: | art.no. 6980 | ||||
| Datum | 15 November 2022 | ||||
| Institutionen | Physik > Institut für Experimentelle und Angewandte Physik > Lehrstuhl Professor Lupton > Arbeitsgruppe John Lupton | ||||
| Projekte |
Gefördert von:
Deutsche Forschungsgemeinschaft (DFG)
(314695032)
| ||||
| Identifikationsnummer |
| ||||
| Stichwörter / Keywords | GENERATION; COHERENCE | ||||
| Dewey-Dezimal-Klassifikation | 500 Naturwissenschaften und Mathematik > 530 Physik | ||||
| Status | Veröffentlicht | ||||
| Begutachtet | Ja, diese Version wurde begutachtet | ||||
| An der Universität Regensburg entstanden | Zum Teil | ||||
| URN der UB Regensburg | urn:nbn:de:bvb:355-epub-532246 | ||||
| Dokumenten-ID | 53224 |
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