Electronic and spin-orbit properties of h-BN encapsulated bilayer graphene

URN to cite this document:: urn:nbn:de:bvb:355-epub-547579
DOI to cite this document:: 10.5283/epub.54757

Zollner, Klaus

; Icking, Eike ; Fabian, Jaroslav

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Date of publication of this fulltext: 05 Oct 2023 05:55

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Item type:	Article
Open Access Type:	Due to SHERPA/RoMEO
Journal or Publication Title:	Phys. Rev. B
Publisher:	American Physical Society
Volume:	108
Page Range:	p. 125126
Date:	18 September 2023
Institutions:	Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Dewey Decimal Classification:	500 Science > 530 Physics
Status:	Published
Refereed:	Yes, this version has been refereed
Created at the University of Regensburg:	Partially
Item ID:	54757

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Abstract

Van der Waals heterostructures consisting of Bernal bilayer graphene (BLG) and hexagonal boron nitride (hBN) are investigated. By performing first-principles calculations, we capture the essential BLG band structure features for several stacking and encapsulation scenarios. A low-energy model Hamiltonian, comprising orbital and spin-orbit coupling (SOC) terms, is employed to reproduce the ...

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