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Spectral hole burning on silicon phthalocyanines isolated in an argon matrix

URN to cite this document:
urn:nbn:de:bvb:355-epub-54918
DOI to cite this document:
10.5283/epub.5491
Braun, Dieter ; Ceulemans, Arnout ; Dick, Bernhard ; Konami, Hideo
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Date of publication of this fulltext: 05 Aug 2009 13:50


Abstract

Irradn. of the monomeric phthalocyanine Hex3SiO(SiPc)OSiHex3 isolated in an Ar matrix at T = 13 K with the 632.8 nm line of a He/Ne laser produces a resonant spectral hole in the vibrational sideband located .apprx.700 cm-1 above the origin of the Q band. This hole is accompanied by several sideholes in the origin region. These permit a precise detn. of several excited-state vibrational ...

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