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Spectral hole burning on silicon phthalocyanines isolated in an argon matrix

Braun, Dieter, Ceulemans, Arnout, Dick, Bernhard and Konami, Hideo (1994) Spectral hole burning on silicon phthalocyanines isolated in an argon matrix. Chemical Physics Letters 225 (4-6), pp. 398-403.

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Abstract

Irradn. of the monomeric phthalocyanine Hex3SiO(SiPc)OSiHex3 isolated in an Ar matrix at T = 13 K with the 632.8 nm line of a He/Ne laser produces a resonant spectral hole in the vibrational sideband located .apprx.700 cm-1 above the origin of the Q band. This hole is accompanied by several sideholes in the origin region. These permit a precise detn. of several excited-state vibrational ...

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Item type:Article
Date:1994
Additional Information (public):CAN 121:267508 74-1 Radiation Chemistry, Photochemistry, and Photographic and Other Reprographic Processes 92984-77-5 Role: FMU (Formation, unclassified), PRP (Properties), FORM (Formation, nonpreparative) (formation from spectral hole burning on silicon phthalocyanines isolated in argon matrix); 92396-89-9 Role: PRP (Properties), RCT (Reactant), RACT (Reactant or reagent) (spectral hole burning in argon matrix-isolated)
Institutions:Chemistry and Pharmacy > Institut für Physikalische und Theoretische Chemie > Chair of Chemistry III - Physical Chemistry (Molecular Spectroscopy and Photochemistry) > Prof. Dr. Bernhard Dick
Identification Number:
ValueType
1994:667508Other
10.1016/0009-2614(91)90438-FDOI
Keywords:Spectral hole burning (on silicon phthalocyanines isolated in argon matrix); Exciton (spectral hole burning on silicon phthalocyanines isolated in argon matrix in relation to); silicon phthalocyanine hole burning argon matrix
Dewey Decimal Classification:500 Science > 540 Chemistry & allied sciences
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:5491
Owner only: item control page

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