Zusammenfassung
Phosphorus and boron diffusion in silicon at temperatures between 900 and 1050 & DEG;C was studied both in bulk and nanostructured samples by means of scanning spreading resistance microscopy. The dopant diffusion from highly doped silicon substrates into 300-1200 nm diameter natural silicon nanopillars is clearly retarded compared to dopant diffusion in the bulk material. A three-dimensional ...
Zusammenfassung
Phosphorus and boron diffusion in silicon at temperatures between 900 and 1050 & DEG;C was studied both in bulk and nanostructured samples by means of scanning spreading resistance microscopy. The dopant diffusion from highly doped silicon substrates into 300-1200 nm diameter natural silicon nanopillars is clearly retarded compared to dopant diffusion in the bulk material. A three-dimensional solution of Fick's equation enables a better understanding of dopant diffusion processes in silicon nanostructures, including all participating point defects. The observed decrease of diffusivity by 20%-50% can be explained by the injection of vacancies at the sidewalls of the pillar. The results do not provide any evidence on a possible change in point defect properties or fundamental diffusion processes in silicon nanostructures with respect to bulk silicon.
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