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Retarded boron and phosphorus diffusion in silicon nanopillars due to stress induced vacancy injection
Prüßing, Jan K., Böckendorf, Tim, Kipke, Felix, Xu, Jiushuai, Puranto, Prabowo, Lundsgaard Hansen, John, Bougeard, Dominique, Peiner, Erwin and Bracht, Hartmut (2022) Retarded boron and phosphorus diffusion in silicon nanopillars due to stress induced vacancy injection. Journal of Applied Physics 131 (7).Date of publication of this fulltext: 29 Feb 2024 12:56
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| Item type | Article | ||||
| Journal or Publication Title | Journal of Applied Physics | ||||
| Publisher: | AIP Publishing | ||||
|---|---|---|---|---|---|
| Place of Publication: | MELVILLE | ||||
| Volume: | 131 | ||||
| Number of Issue or Book Chapter: | 7 | ||||
| Date | 2022 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard | ||||
| Identification Number |
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| Keywords | DOPANT; NANOWIRES; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 57489 |
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