Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope‐Purified Silicon Quantum Wells

URN to cite this document:: urn:nbn:de:bvb:355-epub-593956
DOI to cite this document:: 10.5283/epub.59395

Klos, Jan ; Tröger, Jan ; Keutgen, Jens ; Losert, Merritt P. ; Abrosimov, Nikolay V. ; Knoch, Joachim ; Bracht, Hartmut ; Coppersmith, Susan N. ; Friesen, Mark ; Cojocaru‐Mirédin, Oana ; Schreiber, Lars R. ; Bougeard, Dominique

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Date of publication of this fulltext: 23 Oct 2024 04:59

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Abstract

Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope concentration depth profiles in a SiGe/28Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry down to their ...