Go to content
UR Home

Quantum Hall effect in HgTe quantum wells at nitrogen temperatures

Kozlov, D. A. ; Kvon, Z. D. ; Mikhailov, N. N. ; Dvoretskii, S. A. ; Weishäupl, S. ; Krupko, Y. ; Portal, J.-C.



Abstract

We report on the observation of quantized Hall plateaus in a system of two-dimensional Dirac fermions, implemented in a 6.6 nm HgTe quantum well at magnetic fields up to 34 T at nitrogen temperatures. The activation energies determined from the temperature dependence of the longitudinal resistivity are found to be almost equal for the filling factors nu of 1 and 2. This indicates that the large ...

plus


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons