Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
Article
Ploch, Simon, Wernicke, Tim, Thalmair, Johannes, Lohr, Matthias, Pristovsek, Markus
, Zweck, Josef, Weyers, Markus and Kneissl, Michael
(2012)
Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy.
Journal of Crystal Growth 356, pp. 70-74.
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| Item type | Article | ||||
| Journal or Publication Title | Journal of Crystal Growth | ||||
| Publisher | ELSEVIER SCIENCE BV | ||||
| Place of Publication | AMSTERDAM | ||||
| Volume | 356 | ||||
| Page Range | pp. 70-74 | ||||
| Date | 2012 | ||||
| Date of publication | 19 Dec 2024 09:35 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Chair Professor Back > Group Josef Zweck | ||||
| Identification Number |
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| Keywords | ; Crystal morphology; Metal-organic vapor phase epitaxy; Nitrides; Semiconducting gallium compounds | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 63356 |
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