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Zhang, Rui‐Qin ; De Sarkar, Abir ; Niehaus, Thomas A. ; Frauenheim, Thomas

Excited state properties of Si quantum dots

Article

Zhang, Rui‐Qin , De Sarkar, Abir, Niehaus, Thomas A. and Frauenheim, Thomas (2012) Excited state properties of Si quantum dots. physica status solidi (b) 249 (2), pp. 401-412.



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Details

Item typeArticle
Journal or Publication Titlephysica status solidi (b)
PublisherWILEY-V C H VERLAG GMBH
Place of PublicationWEINHEIM
Volume249
Number of Issue or Book Chapter2
Page Rangepp. 401-412
Date2012
Date of publication19 Dec 2024 09:43
InstitutionsPhysics > Institute of Theroretical Physics
Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Thomas Niehaus
Physics > Institute of Theroretical Physics > Alumni or Retired Professors
Identification Number
ValueType
10.1002/pssb.201100719DOI
KeywordsHYDROGENATED SILICON CLUSTERS; OPTICAL-PROPERTIES; ELECTRONIC-PROPERTIES; POROUS SILICON; SURFACE-STATES; LUMINESCENCE PROPERTIES; NANOCRYSTALS; DENSITY; NANOCLUSTERS; EMISSION; density-functional tight-binding theory; excited state; Si quantum dots; surface
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedYes, this version has been refereed
Created at the University of RegensburgYes
Item ID64086

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