Abstract
In this work, we investigate high-mobility two-dimensional electron gases in Al(x)Ga(1-x)As heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we found that two different sample configurations can be set in situ with mobilities differing by a factor of more than two in a wide range of densities. This observation is ...
Abstract
In this work, we investigate high-mobility two-dimensional electron gases in Al(x)Ga(1-x)As heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we found that two different sample configurations can be set in situ with mobilities differing by a factor of more than two in a wide range of densities. This observation is discussed in the context of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases.
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