Abstract
The results of calculations based on perturbation theory of vibrational relaxation rates due to coupling to substrate phonons for hydrogen atoms adsorbed on a Si(1 0 0):(2 x 1) surface are presented. For this purpose a two-dimensional model is adopted in which both the H-Si stretching and bending motions are included. It is shown that within this model the multiphonon emission and absorption ...
Abstract
The results of calculations based on perturbation theory of vibrational relaxation rates due to coupling to substrate phonons for hydrogen atoms adsorbed on a Si(1 0 0):(2 x 1) surface are presented. For this purpose a two-dimensional model is adopted in which both the H-Si stretching and bending motions are included. It is shown that within this model the multiphonon emission and absorption processes play a negligible role. The calculated lifetimes agree well with available experimental data. (C) 2001 Elsevier Science B.V. All rights reserved.
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