Amplification of interlayer exciton emission in twisted WSe2/WSe2/MoSe2 heterotrilayers

URN to cite this document:: urn:nbn:de:bvb:355-epub-763983
DOI to cite this document:: 10.5283/epub.76398

Palekar, C. C. ; Faria Junior, Paulo E.

; Rosa, Bárbara ; Sousa, Federico B. ; Malard, Leandro M. ; Fabian, Jaroslav

; Reitzenstein, Stephan

License: Creative Commons Attribution 4.0
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Date of publication of this fulltext: 19 Mar 2025 15:26

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Abstract

Van der Waals heterostructures based on transition metal dichalcogenides exhibit physical properties that depend on their monolayer constituents’ twisting angle and stacking order. Particularly in type-II heterostructures, low-energy photoluminescence is dominated by interlayer excitons, resulting in low emission yields, which drastically hampers their optoelectronic applicability. This study ...