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Density of States in Landau Level Tails of GaAs-AlxGa1-xAs Heterostructures

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Weiss, Dieter ; Stahl, E. ; Weimann, G. ; Ploog, K. ; Klitzing, Klaus von
Date of publication of this fulltext: 05 Aug 2009 13:57


From an analysis of the thermally activated resistivity as a function of the magnetic field in the quantum Hall regime we deduced the position of the Fermi energy in the mobility gap as a function of the filling factor and therefore the density of states. The measured density of states is best described by a Gaussian like profile superimposed on a constant background.

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