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Density of States in Landau Level Tails of GaAs-AlxGa1-xAs Heterostructures

URN to cite this document:
urn:nbn:de:bvb:355-epub-78492
Weiss, Dieter ; Stahl, E. ; Weimann, G. ; Ploog, K. ; Klitzing, Klaus von
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Date of publication of this fulltext: 05 Aug 2009 13:57


Abstract

From an analysis of the thermally activated resistivity as a function of the magnetic field in the quantum Hall regime we deduced the position of the Fermi energy in the mobility gap as a function of the filling factor and therefore the density of states. The measured density of states is best described by a Gaussian like profile superimposed on a constant background.


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