Go to content
UR Home

Skipping orbits and enhanced resistivity in large diameter InAs/GaSb antidot lattices

URN to cite this document:
Eroms, Jonathan ; Zitzlsperger, M ; Weiss, Dieter ; Smet, J ; Albrecht, C ; Fleischmann, R ; Behet, M ; DeBoeck, J ; Borghs, G
PDF - Published Version
Date of publication of this fulltext: 05 Aug 2009 13:57


We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. For samples with large antidot diameter, we found a broad maximum of classical origin around 2.5 T in addition to the usual commensurability features at low magnetic fields. The broad maximum can be ascribed to a class of orbits involving multiple reflections on a single antidot. This is shown by ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons