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Skipping orbits and enhanced resistivity in large diameter InAs/GaSb antidot lattices

URN to cite this document:
urn:nbn:de:bvb:355-epub-79045
Eroms, Jonathan ; Zitzlsperger, M ; Weiss, Dieter ; Smet, J ; Albrecht, C ; Fleischmann, R ; Behet, M ; DeBoeck, J ; Borghs, G
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Date of publication of this fulltext: 05 Aug 2009 13:57


Abstract

We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. For samples with large antidot diameter, we found a broad maximum of classical origin around 2.5 T in addition to the usual commensurability features at low magnetic fields. The broad maximum can be ascribed to a class of orbits involving multiple reflections on a single antidot. This is shown by ...

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