Skipping orbits and enhanced resistivity in large diameter InAs/GaSb antidot lattices

URN to cite this document:: urn:nbn:de:bvb:355-epub-79045
DOI to cite this document:: 10.5283/epub.7904

Eroms, Jonathan ; Zitzlsperger, M. ; Weiss, Dieter ; Smet, J. ; Albrecht, C. ; Fleischmann, R. ; Behet, M. ; DeBoeck, J. ; Borghs, G.

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Date of publication of this fulltext: 05 Aug 2009 13:57

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Item type:	Article
Open Access Type:	Due to SHERPA/RoMEO
Journal or Publication Title:	Physical Review B
Volume:	59
Page Range:	R7829
Date:	1999
Institutions:	Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Dewey Decimal Classification:	500 Science > 530 Physics
Status:	Published
Refereed:	Yes, this version has been refereed
Created at the University of Regensburg:	Yes
Item ID:	7904

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Abstract

We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. For samples with large antidot diameter, we found a broad maximum of classical origin around 2.5 T in addition to the usual commensurability features at low magnetic fields. The broad maximum can be ascribed to a class of orbits involving multiple reflections on a single antidot. This is shown by ...

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