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Selectively enhanced inelastic light scattering of electronic excitations in a semiconductor microcavity

Kipp, T., Rolf, L., Schüller, Christian, Endler, D., Heyn, Christian and Heitmann, Detlef (2001) Selectively enhanced inelastic light scattering of electronic excitations in a semiconductor microcavity. Physical Review B (PRB) 63, pp. 195304-195307.

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Other URL: http://link.aps.org/doi/10.1103/PhysRevB.63.195304


Abstract

We report a strong selective enhancement of electronic intersubband excitations of a modulation-doped GaAs-Al0.2Ga0.8As quantum well placed inside an AlAs-Al0.4Ga0.6As planar lambda microcavity. By using specific angles for the incident and scattered light, both the exciting laser and the scattered photons can be tuned into resonance with the cavity mode. Since the width of the high-quality ...

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Item type:Article
Date:10 April 2001
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller
Identification Number:
ValueType
10.1103/PhysRevB.63.195304DOI
Classification:
NotationType
73.21.-b; 73.20.Mf; 78.30.-j; 78.66.FdPACS
Keywords:aluminium compounds, gallium arsenide, III-V semiconductors, microcavity lasers, semiconductor quantum wells, light scattering
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:9569
Owner only: item control page

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