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Kipp, T. ; Rolf, L. ; Schüller, Christian ; Endler, D. ; Heyn, Christian ; Heitmann, Detlef

Selectively enhanced inelastic light scattering of electronic excitations in a semiconductor microcavity

Article

Kipp, T., Rolf, L., Schüller, Christian, Endler, D., Heyn, Christian and Heitmann, Detlef (2001) Selectively enhanced inelastic light scattering of electronic excitations in a semiconductor microcavity. Physical Review B (PRB) 63, pp. 195304-195307.

DOI to cite this document: 10.5283/epub.9569


Abstract

We report a strong selective enhancement of electronic intersubband excitations of a modulation-doped GaAs-Al0.2Ga0.8As quantum well placed inside an AlAs-Al0.4Ga0.6As planar lambda microcavity. By using specific angles for the incident and scattered light, both the exciting laser and the scattered photons can be tuned into resonance with the cavity mode. Since the width of the high-quality ...

We report a strong selective enhancement of electronic intersubband excitations of a modulation-doped GaAs-Al0.2Ga0.8As quantum well placed inside an AlAs-Al0.4Ga0.6As planar lambda microcavity. By using specific angles for the incident and scattered light, both the exciting laser and the scattered photons can be tuned into resonance with the cavity mode. Since the width of the high-quality cavity mode is smaller than the widths of the electronic excitations, we can, in the double-resonance case, selectively enhance parts of the excitations by about 3 orders of magnitude compared to the single-resonance condition. This offers the possibility to selectively study weak electronic excitations in low-dimensional electron systems.



Involved Institutions


Details

Item typeArticle
Journal or Publication TitlePhysical Review B (PRB)
PublisherAmerican Physical Society
Volume63
Page Rangepp. 195304-195307
Date10 April 2001
Date of publication25 Sep 2009 07:40
InstitutionsPhysics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller
Identification Number
ValueType
10.1103/PhysRevB.63.195304DOI
Classification
NotationType
73.21.-b; 73.20.Mf; 78.30.-j; 78.66.FdPACS
Keywordsaluminium compounds, gallium arsenide, III-V semiconductors, microcavity lasers, semiconductor quantum wells, light scattering
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedUnknown
Created at the University of RegensburgUnknown
Item ID9569

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