Selectively enhanced inelastic light scattering of electronic excitations in a semiconductor microcavity

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.9569

Kipp, T. ; Rolf, L. ; Schüller, Christian ; Endler, D. ; Heyn, Christian ; Heitmann, Detlef

PDF
(302kB) - Nur für Mitarbeiter des Archivs

Veröffentlichungsdatum dieses Volltextes: 25 Sep 2009 07:40

Alternative Links zum Volltext:DOI Verlag

Details

Bibliographische Daten exportieren

Zusammenfassung

We report a strong selective enhancement of electronic intersubband excitations of a modulation-doped GaAs-Al0.2Ga0.8As quantum well placed inside an AlAs-Al0.4Ga0.6As planar lambda microcavity. By using specific angles for the incident and scattered light, both the exciting laser and the scattered photons can be tuned into resonance with the cavity mode. Since the width of the high-quality ...