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Kipp, T. ; Rolf, L. ; Schüller, Christian ; Endler, D. ; Heyn, Christian ; Heitmann, Detlef

Selectively enhanced inelastic light scattering of electronic excitations in a semiconductor microcavity

Kipp, T., Rolf, L., Schüller, Christian, Endler, D., Heyn, Christian und Heitmann, Detlef (2001) Selectively enhanced inelastic light scattering of electronic excitations in a semiconductor microcavity. Physical Review B (PRB) 63, S. 195304-195307.

Veröffentlichungsdatum dieses Volltextes: 25 Sep 2009 07:40
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.9569


Zusammenfassung

We report a strong selective enhancement of electronic intersubband excitations of a modulation-doped GaAs-Al0.2Ga0.8As quantum well placed inside an AlAs-Al0.4Ga0.6As planar lambda microcavity. By using specific angles for the incident and scattered light, both the exciting laser and the scattered photons can be tuned into resonance with the cavity mode. Since the width of the high-quality ...

We report a strong selective enhancement of electronic intersubband excitations of a modulation-doped GaAs-Al0.2Ga0.8As quantum well placed inside an AlAs-Al0.4Ga0.6As planar lambda microcavity. By using specific angles for the incident and scattered light, both the exciting laser and the scattered photons can be tuned into resonance with the cavity mode. Since the width of the high-quality cavity mode is smaller than the widths of the electronic excitations, we can, in the double-resonance case, selectively enhance parts of the excitations by about 3 orders of magnitude compared to the single-resonance condition. This offers the possibility to selectively study weak electronic excitations in low-dimensional electron systems.



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Details

DokumentenartArtikel
Titel eines Journals oder einer ZeitschriftPhysical Review B (PRB)
Verlag:American Physical Society
Band:63
Seitenbereich:S. 195304-195307
Datum10 April 2001
InstitutionenPhysik > Institut für Experimentelle und Angewandte Physik > Lehrstuhl Professor Lupton > Arbeitsgruppe Christian Schüller
Identifikationsnummer
WertTyp
10.1103/PhysRevB.63.195304DOI
Klassifikation
NotationArt
73.21.-b; 73.20.Mf; 78.30.-j; 78.66.FdPACS
Stichwörter / Keywordsaluminium compounds, gallium arsenide, III-V semiconductors, microcavity lasers, semiconductor quantum wells, light scattering
Dewey-Dezimal-Klassifikation500 Naturwissenschaften und Mathematik > 530 Physik
StatusVeröffentlicht
BegutachtetUnbekannt / Keine Angabe
An der Universität Regensburg entstandenUnbekannt / Keine Angabe
Dokumenten-ID9569

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