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Electronic Raman scattering in p-doped GaAs/Ga1-xAlxAs quantum-well structures: Scattering mechanisms and many-particle interactions

Schüller, Christian, Krause, Jürgen, Schaack, G., Weimann, G. and Panzlaff, K. (1994) Electronic Raman scattering in p-doped GaAs/Ga1-xAlxAs quantum-well structures: Scattering mechanisms and many-particle interactions. Physical Review B (PRB) 50 (24), pp. 18387-18394.

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Other URL: http://link.aps.org/doi/10.1103/PhysRevB.50.18387


Abstract

By means of resonance Raman spectroscopy we have investigated intersubband transitions of quasi-two-dimensional (2D) hole gases in p-type modulation-doped GaAs/Ga1-xAlxAs quantum-well structures. The observed excitations have an essentially single-particle character due to Landau damping of collective excitations and due to single-particle scattering by energy-density fluctuations under ...

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Item type:Article
Date:15 December 1994
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller
Identification Number:
ValueType
10.1103/PhysRevB.50.18387DOI
Classification:
NotationType
73.20.Mf, 73.20.Dx, 78.30.FsPACS
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:9575
Owner only: item control page

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