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Transmission electron microscopy of short-period Si/Ge strained-layer superlattices on Ge substrates

DOI to cite this document:
Wegscheider, Werner ; Eberl, Karl ; Cerva, H. ; Oppolzer, H.
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Date of publication of this fulltext: 26 Oct 2009 13:08


Structural investigations of high quality Si/Ge strained-layer superlattices (SLSs) on [001] oriented Ge substrates prepared by molecular beam epitaxy are presented. Cross-sectional transmission electron microscopy reveals that a defect-free superlattice is achieved for a structure composed of a 20-period sequence of 3 monolayers (ML) Si and 9 ML Ge. High-resolution lattice images and electron ...


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