Eberl, Karl, Friess, H., Wegscheider, Werner, Menczigar, U. and Abstreiter, Gerhard (1989) Improvement of structural properties of Si/Ge superlattices. Thin Solid Films 183 (1-2), pp. 95-103.
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Abstract
Short-period Si/Ge strained-layer superlattices are grown by molecular beam epitaxy (MBE) on Si(100) and Ge(100) substrates. Low-energy electron diffraction and Auger electron spectroscopy are performed between growth intervals, to obtain structural and compositional information. Raman spectroscopy and transmission electron microscopy are used for ex-situ characterization. Different buffer ...
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| Item type: | Article | ||||
|---|---|---|---|---|---|
| Date: | 30 December 1989 | ||||
| Institutions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider | ||||
| Identification Number: |
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| Dewey Decimal Classification: | 500 Science > 530 Physics | ||||
| Status: | Published | ||||
| Refereed: | Unknown | ||||
| Created at the University of Regensburg: | Unknown | ||||
| Item ID: | 9978 |
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