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Improvement of structural properties of Si/Ge superlattices

DOI to cite this document:
Eberl, Karl ; Friess, H. ; Wegscheider, Werner ; Menczigar, U. ; Abstreiter, Gerhard
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Date of publication of this fulltext: 26 Oct 2009 13:15


Short-period Si/Ge strained-layer superlattices are grown by molecular beam epitaxy (MBE) on Si(100) and Ge(100) substrates. Low-energy electron diffraction and Auger electron spectroscopy are performed between growth intervals, to obtain structural and compositional information. Raman spectroscopy and transmission electron microscopy are used for ex-situ characterization. Different buffer ...


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