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Novel relaxation process in strained Si/Ge superlattices grown on Ge (001)

DOI to cite this document:
10.5283/epub.9980
Wegscheider, Werner ; Eberl, Karl ; Abstreiter, Gerhard ; Cerva, H. ; Oppolzer, H.
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Date of publication of this fulltext: 26 Oct 2009 13:22


Abstract

A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge strained-layer superlattices grown by molecular beam epitaxy on Ge(001). In order to investigate the transition from coherent to incoherent growth we have studied a set of samples with a varying number of superlattice periods by transmission electron microscopy. High-resolution lattice imaging reveals ...

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