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Group IV element (Si, Ge and α-Sn) superlattices — low temperature MBE

DOI to cite this document:
Eberl, Karl ; Wegscheider, Werner ; Abstreiter, Gerhard
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Date of publication of this fulltext: 26 Oct 2009 13:37


Si/Ge and Sn/Ge heterostructures and short-period superlattices are grown by a modified molecular beam epitaxy (MBE) technique on Si and Ge substrates. Low energy electron diffraction and Auger electron spectroscopy are used in order to optimize the growth conditions with respect to interface roughness, segregation and intermixing. Transmission electron micrographs reveal that the interface ...


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