Go to content
UR Home

Infrared optical properties and band structure of α-Sn/Ge superlattices on Ge substrates

DOI to cite this document:
Olajos, Janos ; Vogl, P. ; Wegscheider, Werner ; Abstreiter, Gerhard
(978kB) - Repository staff only
Date of publication of this fulltext: 26 Oct 2009 13:30


Short-period α-Sn/Ge strained-layer superlattices have been prepared on [001] Ge substrates by low-temperature molecular-beam epitaxy. We have achieved almost-defect-free and thermally stable single-crystalline structures. Photocurrent measurements in a series of Sn1Gem (m>10) superlattices reveal a shift of the fundamental energy gap to smaller energies with decreasing Ge layer thickness m, in ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons