Sharp doping profiles and two-dimensional electron systems in Ge based heterostructures

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.9985

Wilhelm, J. ; Wegscheider, Werner ; Abstreiter, Gerhard

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Veröffentlichungsdatum dieses Volltextes: 26 Okt 2009 13:43

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Zusammenfassung

Sharp Sb doping profiles have been achieved in Ge by low temperature molecular beam epitaxy on Ge(001) substrates. The strong tendency of Sb to segregate on the growing Ge surface has been overcome by large substrate temperature modulations during growth. In this way homogeneous doping profiles with a free carrier concentration up to 1.5 × 1020 cm−3 and δ-doped Ge layers with a sheet carrier ...