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Sharp doping profiles and two-dimensional electron systems in Ge based heterostructures

Wilhelm, J., Wegscheider, Werner and Abstreiter, Gerhard (1992) Sharp doping profiles and two-dimensional electron systems in Ge based heterostructures. Surface Science 267 (1-3), pp. 90-93.

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Abstract

Sharp Sb doping profiles have been achieved in Ge by low temperature molecular beam epitaxy on Ge(001) substrates. The strong tendency of Sb to segregate on the growing Ge surface has been overcome by large substrate temperature modulations during growth. In this way homogeneous doping profiles with a free carrier concentration up to 1.5 × 1020 cm−3 and δ-doped Ge layers with a sheet carrier ...

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Item type:Article
Date:1992
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/0039-6028(92)91096-TDOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:9985
Owner only: item control page

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