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Electronic structure and optical properties of short-period α-SnnGem superlattices

DOI to cite this document:
Vogl, P. ; Olajos, Janos ; Wegscheider, Werner ; Abstreiter, Gerhard
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Date of publication of this fulltext: 26 Oct 2009 13:48


Short period α-Sn/Ge strained layer superlattices have been prepared on Ge(001) substrates by low temperature molecular beam epitaxy. We have achieved almost defect free and thermally stable single crystalline structures. Photourrent measurements in a series of Sn1Gem(m>10) superlattices reveal a shift of the fundamental energy gap to smaller energies with decreasing Ge layer thickness m, in good ...


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