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- DOI to cite this document:
- 10.5283/epub.9987
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Abstract
Short period α-Sn/Ge strained layer superlattices have been prepared on Ge(001) substrates by low temperature molecular beam epitaxy. We have achieved almost defect free and thermally stable single crystalline structures. Photourrent measurements in a series of Sn1Gem(m>10) superlattices reveal a shift of the fundamental energy gap to smaller energies with decreasing Ge layer thickness m, in good ...

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