Optical transitions in strained Ge/Si superlattices

DOI to cite this document:: 10.5283/epub.9988

Schmidt, U. ; Humlícek, J. ; Lukes, F. ; Cardona, M. ; Presting, H. ; Kibbel, H. ; Kasper, E. ; Eberl, Karl ; Wegscheider, Werner ; Abstreiter, Gerhard

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Date of publication of this fulltext: 26 Oct 2009 13:50

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Abstract

Spectroscopic ellipsometry has been used to determine the dielectric functions of ultrathin Ge/Si superlattices with varying strain states and periodicity at room temperature. The E1-like transitions could be resolved with the multiple-angle-of-incidence technique and in a thick, Ge-rich sample; they split up into various contributions and start to absorb the light at lower energies than ...