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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-751860
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.75186
Zusammenfassung
Ballistic, gate-defined devices in two-dimensional materials offer a platform for electron optics phenomena influenced by the material’s properties and gate control. We study the ray trajectory dynamics of all-electronic, gate-defined cavities in bilayer graphene to establish how distinct regimes of the internal and outgoing charge carrier dynamics can be tuned and optimized by the cavity ...
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