Investigations on HVPE - grown InGaN quantum wells on non- and semipolar GaN

The use of semi- and non-polar crystal facets for the deposition of quantum wells designed for green emitting lasers has been shown to be a successful concept. Therefore, the future research – as suggested by this proposal – is mainly focused on the measurement of internal (piezo-)electric fields both in GaN and InGaN layers. The goals are:- The piezoelectric fields created within quantum wells on various crystal facettes will be measured and compared to theoretical calculations.- The piezoelectric field present within the GaN host material will be measured quantitatively in strength and lateral extension.- The In content within the quantum well will be measured by EDX.- The measured value of the piezoelectric field will be correlated with the In content of the InGaN quantum well.- The density and type of crystallographic defects formed in the quantum well region will be correlated with the In content.