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Spin injection and detection in Silicon based heterostructures

Gefördert von: Deutsche Forschungsgemeinschaft (DFG)
Projektnummer: 40956481

Link zum Projekt auf Webseiten des Förderers

https://gepris.dfg.de/gepris/projekt/40956481

Dauer

Projektbeginn: 2007
Projektende: 2015

Beteiligte Institutionen

Nicht ausgewählt

Weitere Informationen

Zusammenfassung

Silicon being the dominant material used in semiconductor industry, the demonstration of reliable control of electron spin ensembles in Si compatible structures represents a milestone towards a commercial application of all-semiconductor spintronic devices. Due to intrinsic properties of bulk Si this demonstration has proven to be challenging until very recently. This project aims at the demonstration of spin injection and transport in Si based thin films as well as at the exploration of the underlying physical phenomena. A key element will be the use of carrier confinement with Germanium quantum dots in Si and Silicon-Germanium quantum wells, giving access to an optical probing of electron spins. In a second focus we will characterize self-assembled Germanium Manganese nanomagnets in a Si matrix. Nanomagnetism studied in semiconductor matrices offers an interesting approach to understand the properties of magnetic semiconductors as well as the possibility of efficient spin injection into Si.

Team

Principal Investigator: Dominique Bougeard

Publikationen


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