Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates

DOI to cite this document:: 10.5283/epub.11821

Gmeinwieser, Nikolaus ; Engl, Karl ; Gottfriedsen, P. ; Schwarz, Ulrich

; Zweck, Josef ; Wegscheider, Werner ; Miller, S. ; Lugauer, H.-J. ; Leber, A. ; Weimar, A. ; Lell, Alfred ; Härle, Volker

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Date of publication of this fulltext: 11 Jan 2010 13:19

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Abstract

Epitaxial lateral overgrown (ELOG) gallium nitride (GaN) on SiC is being studied as a possible substrate for blue laser diodes. A defect density below 2.2x10(7) cm(-2) in the wings, compared to 2x10(9) cm(-2) in the windows, was achieved. Interaction of the overgrown GaN with the SiO2 mask causes a few degree wing tilt and a transition region of high defect density between windows and wings. ...