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Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates

DOI to cite this document:
Gmeinwieser, Nikolaus ; Engl, Karl ; Gottfriedsen, P. ; Schwarz, Ulrich ; Zweck, Josef ; Wegscheider, Werner ; Miller, S. ; Lugauer, H.-J. ; Leber, A. ; Weimar, A. ; Lell, Alfred ; Härle, Volker
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Date of publication of this fulltext: 11 Jan 2010 13:19


Epitaxial lateral overgrown (ELOG) gallium nitride (GaN) on SiC is being studied as a possible substrate for blue laser diodes. A defect density below 2.2×107 cm–2 in the wings, compared to 2×109 cm–2 in the windows, was achieved. Interaction of the overgrown GaN with the SiO2 mask causes a few degree wing tilt and a transition region of high defect density between windows and wings. Diminished ...


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