Number of items at this level: 65.
2011
2010
2009
2007
Witzigmann, B.,
Laino, V.,
Roemer, F.,
Lauterbach, C.,
Schwarz, Uli,
Rumbolz, C.,
Schillgalies, M.,
Lell, A. and
Härle, V.
(2007)
Analysis of substrate modes in GaN/InGaN Lasers.
SPIE proceedings 6468, 64680Q.
Fulltext not available.
Kojima, K.,
Funato, M.,
Kawakami, Y.,
Braun, Harald,
Schwarz, Uli,
Nagahama, S. and
Mukai, T.
(2007)
Comparison between optical gain spectra of InxGa1-xN/In0.02Ga0.98N laser diodes emitting at 404 nm and 470 nm.
phys. stat. sol. (a) 204, p. 2108.
Fulltext not available.
Braun, Harald,
Lauterbach, C.,
Schwarz, Uli,
Laino, V.,
Witzigmann, B.,
Rumbolz, C.,
Schillgalies, M.,
Lell, A. and
Härle, V.
(2007)
Experimental and Theoretical Study of Substrate Modes in (Al,In)GaN Laser Diodes.
phys. stat. sol. (c) 4, p. 2772.
Fulltext not available.
Laino, V.,
Roemer, F.,
Witzigmann, B.,
Lauterbach, C.,
Schwarz, Uli,
Rumbolz, C.,
Schillgalies, M.,
Furitsch, M.,
Lell, A. and
Här, V.
(2007)
Experimental and theoretical study of substrate modes in (Al,In)GaN laser diodes.
IEEE J. Quantum Electronics 43, p. 16.
Fulltext not available.
Schwarz, Uli,
Braun, Harald,
Kojima, K.,
Kawakami, Y.,
Nagahama, S. and
Mukai, T.
(2007)
Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells.
Applied Physics Letters 91, p. 123503.
Fulltext not available.
Schwarz, Uli,
Braun, Harald,
Kojima, K.,
Funato, M.,
Kawakami, Y.,
Nagahama, S. and
Mukai, T.
(2007)
Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375 nm to 470 nm spectral range.
SPIE proceedings 6485, p. 648506.
Fulltext not available.
Vierheilig, Clemens,
Braun, Harald,
Schwarz, Uli,
Wegscheider, Werner,
Baur, E.,
Strauß, U. and
Härle, V.
(2007)
Lateral Diffusion of Photogenerated Carriers in InGaN/GaN-heterostructures Observed by PL Measurements.
phys. stat. sol. (c) 4, p. 2362.
Fulltext not available.
Laubsch, A.,
Sabathil, M.,
Bruederl, G.,
Wagner, J.,
Strassburg, M.,
Baur, E.,
Braun, Harald,
Schwarz, Uli,
Lell, A.,
Lutgen, S.,
Linder, N.,
Oberschmid, R. and
Hahn, B.
(2007)
Measurement of the internal quantum efficiency of InGaN quantum wells.
Proc. SPIE 6486, 64860J.
Fulltext not available.
Swietlik, T.,
Franssen, G.,
Czernecki, R.,
Leszczynski, M.,
Skierbiszewski, C.,
Grzegory, I.,
Bohdan, R.,
Trzeciakowski, W.,
Suski, T.,
Perlin, P.,
Lauterbach, C. and
Schwarz, Uli
(2007)
Mode dynamics of high power (InAl)GaN based laser diodes grown on bulk GaN substrate.
Journal of Appli
ed Physics 101, 083109.
Fulltext not available.
Schwarz, Uli and
Witzigmann, B.
(2007)
Nitride Semiconductor Devices.
In:
Optical properties of edge-emitting lasers: measurement and simulation.
Wiley-VCH.
Fulltext not available.
Kojima, K.,
Schwarz, Uli,
Funato, M.,
Kawakami, Y.,
Nagahama, S. and
Mukai, T.
(2007)
Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes.
Optics Express 15, p. 7730.
Fulltext not available.
Vierheilig, Clemens,
Braun, Harald,
Schwarz, Uli,
Wegscheider, Werner,
Baur, E.,
Strauß, U. and
Härle, V.
(2007)
Temperature- and excitation density dependency of photoluminescence spectra in InGaN/GaN-heterostructures.
phys. stat. sol. (c) 4, p. 179.
Fulltext not available.
2006
Engl, Karl,
Beer, Martin,
Gmeinwieser, Nikolaus,
Schwarz, Ulrich,
Zweck, Josef,
Wegscheider, Werner,
Miller, S.,
Miler, A.,
Lugauer, H.,
Brüderl, G.,
Lell, A. and
Härle, V.
(2006)
Influence of an in situ-deposited SiN_x intermediate layer inside GaN and AlGaN layers on SiC substrates.
Journal of Crystal Growth 289 (1), pp. 6-13.
Fulltext restricted.
Witzigmann, B.,
Laino, V.,
Luisier, M.,
Schwarz, Uli,
Feicht, Georg,
Wegscheider, Werner,
Engl, K.,
Furitsch, M.,
Leber, A.,
Lell, A. and
Härle, V.
(2006)
Microscopic analysis of optical gain in InGaN/GaN quantum wells.
Applied Physics Letters 88, 021104.
Fulltext restricted.
Witzigmann, B.,
Laino, V.,
Luisier, M.,
Schwarz, Uli,
Fischer, H.,
Feicht, Georg,
Wegscheider, Werner,
Rumbolz, C.,
Lell, A. and
Härle, V.
(2006)
Analysis of temperature dependent optical gain in GaN/InGaN quantum well structures.
IEEE Phot. Tech. Lett. 18, p. 1600.
Fulltext not available.
Kojima, K.,
Funato, M.,
Kawakami, Y.,
Nagahama, S.,
Kumai, T.,
Braun, Harald and
Schwarz, Uli
(2006)
Gain suppression phenoma observed in InGaN QW laser diodes emitting at 470 nm.
Applied Physics Letters 89, p. 241127.
Fulltext not available.
Schwarz, Uli,
Lauterbach, C.,
Schillgalies, M.,
Rumbolz, C.,
Furitsch, M.,
Lell, A. and
Härle, V.
(2006)
Time-resolved scanning near-field microscopy of InGaN laser diode dynamics.
SPIE proceedings 6184, 61840K.
Fulltext not available.
2005
Schoedl, T.,
Schwarz, Uli,
Kümmler, V.,
Furitsch, M.,
Leber, A.,
Miler, A.,
Lell, A. and
Härle, V.
(2005)
Facet degradation of GaN heterostructure laser diodes.
Journal of Appli
ed Physics 97, p. 123102.
Fulltext not available.
Schwarz, Uli,
Pindl, M.,
Sturm, Evi,
Furitsch, M.,
Leber, A.,
Miller, S.,
Lell, A. and
Härle, V.
(2005)
Influence of ridge geometry on lateral mode stability of (In/Al)GaN laser diodes.
phys. stat. sol. (a) 202, p. 261.
Fulltext not available.
Schwarz, Uli,
Pindl, M.,
Wegscheider, Werner,
Eichler, C.,
Scholz, F.,
Furitsch, M.,
Leber, A.,
Miller, S.,
Lell, A. and
Härle, V.
(2005)
Near-field and far-field dynamics of (Al,In)GaN laser diodes.
Applied Physics Letters 86, p. 161112.
Fulltext not available.
Gmeinwieser, N.,
Gottfriedsen, P.,
Schwarz, Uli,
Wegscheider, Werner,
Clos, R.,
Krtschil, A.,
Krost, A.,
Weimar, A.,
Brüderl, G.,
Lell, A. and
Härle, V.
(2005)
Single dislocation induced strain in GaN.
Journal of Appli
ed Physics 98, p. 116102.
Fulltext not available.
2004
Gmeinwieser, N.,
Engl, K.,
Gottfriedsen, P.,
Schwarz, Uli,
Zweck, Josef,
Wegscheider, Werner,
Miller, S.,
Lugauer, H.,
Leber, A.,
Lell, A. and
Härle, V.
(2004)
Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrate.
Journal of Appli
ed Physics 96, J. Appl. Phys..
Fulltext not available.
Schwarz, Uli,
Sturm, Evi,
Wegscheider, Werner,
Kümmler, V.,
Lell, A. and
Härle, V.
(2004)
Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers.
Applied Physics Letters 85, p. 1475.
Fulltext not available.
Schoedl, T.,
Schwarz, Uli,
Miller, S.,
Leber, A.,
Furitsch, M.,
Lell, A. and
Härle, V.
(2004)
Facet degradation of (Al,In)GaN laser diodes.
phys. stat. sol. (a) 201, p. 2635.
Fulltext not available.
Gmeinwieser, N.,
Engl, K.,
Schwarz, Uli,
Zweck, Josef,
Wegscheider, Werner,
Miller, S.,
Leber, A.,
Lell, A. and
Härle, V.
(2004)
Strain, wing tilt and Photoluminescence in ELOG GaN on SiC substrates.
phys. stat. sol. (a) 201, p. 2760.
Fulltext not available.
2003
Schwarz, Uli,
Sturm, Evi,
Wegscheider, Werner,
Kümmler, V.,
Lell, A. and
Härle, V.
(2003)
Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers.
phys. stat. sol. (a) 200, p. 143.
Fulltext not available.
Schwarz, Uli,
Schuck, P.,
Mason, M.,
Grober, R.,
Roskowsky, A.,
Einfeldt, S. and
Davis, R.
(2003)
Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC.
Physical Review B 67, p. 45321.
Schwarz, Uli,
Sturm, Evi,
Wegscheider, Werner,
Kümmler, V.,
Lell, A. and
Härle, V.
(2003)
Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers.
Applied Physics Letters 83, p. 4095.
Fulltext not available.
2002
Kümmler, V.,
Brüderl, G.,
Bader, S.,
Miller, S.,
Weimar, A.,
Lell, A.,
Härle, V.,
Schwarz, Uli,
Gmeinwieser, N. and
Wegscheider, Werner
(2002)
Degradation Analysis of InGaN Laser Diodes.
phys. stat. sol. (a) 194, p. 419.
Fulltext not available.
Bittner, B.,
Scherm, M.,
Schoedl, T.,
Tyroller, T.,
Schwarz, Uli and
Maier, Max
(2002)
Phonon-polariton damping by low-frequency excitations in lithium tantalate investigated by spontaneous and stimulated Raman scattering.
J. Phys.: Condes. Matter 14, p. 9013.
Fulltext not available.
2001
Roskowsky, A.,
Miraglia, P.,
Preble, E.,
Einfeldt, S.,
Stiles, T.,
Davis, R.,
Schuck, J.,
Grober, R. and
Schwarz, Uli
(2001)
Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin films.
phys. stat. sol. (a) 188, p. 729.
Fulltext not available.
2000
1999
1998
1997
1996
This list was generated on Mon Oct 7 08:09:09 2024 CEST.