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Near-field and far-field dynamics of (Al,In)GaN laser diodes

Schwarz, Ulrich ; Pindl, Markus ; Wegscheider, Werner ; Eichler, Christoph ; Scholz, Ferdinand ; Furitsch, Michael ; Leber, Andreas ; Miller, Stephan ; Lell, Alfred ; Härle, Volker
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Date of publication of this fulltext: 11 Jan 2010 13:34


Abstract

Near- and far-field dynamics of edge-emitting (Al,In)GaN laser diodes are measured simultaneously with a 100 nm spatial and a 5 ns temporal resolution using a scanning near-field microscope. We reconstruct the phase distribution at the laser diode facet. Beam steering and near-field mode dynamics are interpreted in terms of thermal and carrier induced change of refractive index in the waveguide.


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