Go to content
UR Home

Near-field and far-field dynamics of (Al,In)GaN laser diodes

DOI to cite this document:
Schwarz, Ulrich ; Pindl, Markus ; Wegscheider, Werner ; Eichler, Christoph ; Scholz, Ferdinand ; Furitsch, Michael ; Leber, Andreas ; Miller, Stephan ; Lell, Alfred ; Härle, Volker
(305kB) - Repository staff only
Date of publication of this fulltext: 11 Jan 2010 13:34


Near- and far-field dynamics of edge-emitting (Al,In)GaN laser diodes are measured simultaneously with a 100 nm spatial and a 5 ns temporal resolution using a scanning near-field microscope. We reconstruct the phase distribution at the laser diode facet. Beam steering and near-field mode dynamics are interpreted in terms of thermal and carrier induced change of refractive index in the waveguide.

Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons