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Near-field and far-field dynamics of (Al,In)GaN laser diodes

Schwarz, Ulrich, Pindl, Markus, Wegscheider, Werner, Eichler, Christoph, Scholz, Ferdinand, Furitsch, Michael, Leber, Andreas, Miller, Stephan, Lell, Alfred and Härle, Volker (2005) Near-field and far-field dynamics of (Al,In)GaN laser diodes. Applied Physics Letters 80 (16), p. 161112.

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Abstract

Near- and far-field dynamics of edge-emitting (Al,In)GaN laser diodes are measured simultaneously with a 100 nm spatial and a 5 ns temporal resolution using a scanning near-field microscope. We reconstruct the phase distribution at the laser diode facet. Beam steering and near-field mode dynamics are interpreted in terms of thermal and carrier induced change of refractive index in the waveguide.


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Item type:Article
Date:14 April 2005
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1900304DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/86/161112/1Publisher
Classification:
NotationType
42.55.Px; 42.60.Jf; 68.37.Uv;PACS
Keywords:aluminium compounds, indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor lasers, beam steering, refractive index, carrier density, waveguide lasers, near-field scanning optical microscopy
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:11961
Owner only: item control page

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