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Schwarz, Ulrich ; Pindl, Markus ; Wegscheider, Werner ; Eichler, Christoph ; Scholz, Ferdinand ; Furitsch, Michael ; Leber, Andreas ; Miller, Stephan ; Lell, Alfred ; Härle, Volker

Near-field and far-field dynamics of (Al,In)GaN laser diodes

Schwarz, Ulrich , Pindl, Markus, Wegscheider, Werner, Eichler, Christoph, Scholz, Ferdinand, Furitsch, Michael, Leber, Andreas, Miller, Stephan, Lell, Alfred and Härle, Volker (2005) Near-field and far-field dynamics of (Al,In)GaN laser diodes. Applied Physics Letters 80 (16), p. 161112.

Date of publication of this fulltext: 11 Jan 2010 13:34
Article
DOI to cite this document: 10.5283/epub.11961


Abstract

Near- and far-field dynamics of edge-emitting (Al,In)GaN laser diodes are measured simultaneously with a 100 nm spatial and a 5 ns temporal resolution using a scanning near-field microscope. We reconstruct the phase distribution at the laser diode facet. Beam steering and near-field mode dynamics are interpreted in terms of thermal and carrier induced change of refractive index in the waveguide.© 2005 American Institute of Physics.



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Details

Item typeArticle
Journal or Publication TitleApplied Physics Letters
Publisher:AMER INST PHYSICS
Place of Publication:MELVILLE
Volume:80
Number of Issue or Book Chapter:16
Page Range:p. 161112
Date14 April 2005
InstitutionsPhysics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Ulrich Schwarz
Identification Number
ValueType
10.1063/1.1900304DOI
Related URLs
URLURL Type
http://link.aip.org/link/?APPLAB/86/161112/1Publisher
Classification
NotationType
42.55.Px; 42.60.Jf; 68.37.Uv;PACS
KeywordsQUANTUM-WELL LASERS; OPTICAL GAIN; INGAN LASER; POWER;
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedUnknown
Created at the University of RegensburgUnknown
Item ID11961

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