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Local strain and potential distribution induced by single dislocations in GaN

DOI to cite this document:
Gmeinwieser, Nikolaus ; Gottfriedsen, P. ; Schwarz, Ulrich ; Wegscheider, Werner ; Clos, R. ; Krtschil, A. ; Krost, A. ; Weimar, Andreas ; Brüderl, G. ; Lell, Alfred ; Härle, Volker
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Date of publication of this fulltext: 25 Jan 2010 13:03


The presence of a threading edge dislocation terminated at the surface of GaN bulk substrates causes a dipole-like strain state ranging over a several micrometer square area. The local strain state is derived from microphotoluminescence mappings of the near-band-edge spectrum and is quantitatively reproduced by a three-dimensional elastic deformation model approach. These results are compared ...


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