Gmeinwieser, Nikolaus, Gottfriedsen, P., Schwarz, Ulrich, Wegscheider, Werner, Clos, R., Krtschil, A., Krost, A., Weimar, Andreas, Brüderl, G., Lell, Alfred and Härle, Volker
(2005)
Local strain and potential distribution induced by single dislocations in GaN.
Journal of Applied Physics 98 (11), p. 116102.
Date of publication of this fulltext: 25 Jan 2010 13:03at publisher (via DOI)
Abstract
The presence of a threading edge dislocation terminated at the surface of GaN bulk substrates causes a dipole-like strain state ranging over a several micrometer square area. The local strain state is derived from microphotoluminescence mappings of the near-band-edge spectrum and is quantitatively reproduced by a three-dimensional elastic deformation model approach. These results are compared ...
Abstract
The presence of a threading edge dislocation terminated at the surface of GaN bulk substrates causes a dipole-like strain state ranging over a several micrometer square area. The local strain state is derived from microphotoluminescence mappings of the near-band-edge spectrum and is quantitatively reproduced by a three-dimensional elastic deformation model approach. These results are compared with the local electrical potential distortion due to the core charge and attracted defects as analyzed by scanning surface-potential microscopy. In contrast to the local strain, the potential profile does not show a dipole-like behavior and decreases laterally faster.
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