Gmeinwieser, Nikolaus, Gottfriedsen, P., Schwarz, Ulrich, Wegscheider, Werner, Clos, R., Krtschil, A., Krost, A., Weimar, Andreas, Brüderl, G., Lell, Alfred und Härle, Volker
(2005)
Local strain and potential distribution induced by single dislocations in GaN.
Journal of Applied Physics 98 (11), S. 116102.
Zum Artikel beim Verlag (über DOI)
Zusammenfassung
The presence of a threading edge dislocation terminated at the surface of GaN bulk substrates causes a dipole-like strain state ranging over a several micrometer square area. The local strain state is derived from microphotoluminescence mappings of the near-band-edge spectrum and is quantitatively reproduced by a three-dimensional elastic deformation model approach. These results are compared ...
Zusammenfassung
The presence of a threading edge dislocation terminated at the surface of GaN bulk substrates causes a dipole-like strain state ranging over a several micrometer square area. The local strain state is derived from microphotoluminescence mappings of the near-band-edge spectrum and is quantitatively reproduced by a three-dimensional elastic deformation model approach. These results are compared with the local electrical potential distortion due to the core charge and attracted defects as analyzed by scanning surface-potential microscopy. In contrast to the local strain, the potential profile does not show a dipole-like behavior and decreases laterally faster.
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