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Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates

Engl, Karl, Beer, Martin, Gmeinwieser, Nikolaus, Schwarz, Ulrich, Zweck, Josef, Wegscheider, Werner, Miller, Stephan, Miler, A., Lugauer, H.-J., Brüderl, G., Lell, Alfred and Härle, Volker (2006) Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates. Journal of Crystal Growth 289 (1), pp. 6-13.

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Abstract

In this work we present a study on the influence of an in situ grown SiNx intermediate layer inside (Al)GaN epitaxial layers grown on SiC substrates on dislocation densities and material strain of the epitaxial films. A defect density of View the MathML source was achieved by reducing the number of pure edge dislocations in the order of one magnitude. It was found that a reduction of the ...

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Item type:Article
Date:15 March 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/j.jcrysgro.2005.10.115DOI
Classification:
NotationType
78.55.Cr; 81.15.Gh; 61.72.Ff; 68.35.Gy; 68.55.JkPACS
Keywords:A1. Characterization; A1. Defects; A l. Dislocation; A1. Etching; B l. GaN
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:12183
Owner only: item control page

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