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- DOI to cite this document:
- 10.5283/epub.12183
Abstract
In this work we present a study on the influence of an in situ grown SiNx intermediate layer inside (Al)GaN epitaxial layers grown on SiC substrates on dislocation densities and material strain of the epitaxial films. A defect density of View the MathML source was achieved by reducing the number of pure edge dislocations in the order of one magnitude. It was found that a reduction of the ...
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