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Density dependent cyclotron and intersubband resonance in inverted CdTe/HgTe/CdTe quantum wells.

Schultz, M. ; Merkt, U. ; Sonntag, A. ; Rössler, Ulrich ; Colin, T. ; Helgesen, P. ; Skauli, T. ; Lovold, S.
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Date of publication of this fulltext: 05 Aug 2009 13:28


Abstract

Cyclotron and intersubband resonances in HgTe quantum wells in the inverted band regime are studied by Fourier-transform spectroscopy. Metal-oxide-semiconductor field-effect transistors (MOSFETs) allow us to tune the electron density. In particular, we investigate filling factor dependent splittings of the cyclotron resonance in strong magnetic fields and a crossing of Landau levels of the conduction and valence subband. The experimental results are well described by a 6 × 6 k·p-model.


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