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Density dependent cyclotron and intersubband resonance in inverted CdTe/HgTe/CdTe quantum wells.

Schultz, M., Merkt, U., Sonntag, A., Rössler, Ulrich, Colin, T., Helgesen, P., Skauli, T. and Lovold, S. (1998) Density dependent cyclotron and intersubband resonance in inverted CdTe/HgTe/CdTe quantum wells. Journal of Crystal Growth 184-18, pp. 1180-1184.

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Abstract

Cyclotron and intersubband resonances in HgTe quantum wells in the inverted band regime are studied by Fourier-transform spectroscopy. Metal-oxide-semiconductor field-effect transistors (MOSFETs) allow us to tune the electron density. In particular, we investigate filling factor dependent splittings of the cyclotron resonance in strong magnetic fields and a crossing of Landau levels of the conduction and valence subband. The experimental results are well described by a 6 × 6 k·p-model.


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Item type:Article
Date:2 February 1998
Institutions:Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Ulrich Rössler
Identification Number:
ValueType
10.1016/S0022-0248(98)80247-9DOI
Keywords:HgTe; CdTe; Quantum well; Two-dimensional electron system; Cyclotron resonance; Intersubband resonance
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:1383
Owner only: item control page

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