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Pressure dependence of the electronic band gap in 6H-SiC

Engelbrecht, F., Zeman, J., Wellenhofer, G., Peppermüller, C., Helbig, R., Martinez, G. and Rössler, Ulrich (1996) Pressure dependence of the electronic band gap in 6H-SiC. Physica Status Solidi (B) 198 (1), pp. 81-86.

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Other URL: http://www3.interscience.wiley.com/cgi-bin/abstract/112427495/ABSTRACT


Photoluminescence experiments on 6H-SiC doped with nitrogen have been performed at low temperature (T = (29 ± 2) K) under hydrostatic pressure up to 5 GPa. The pressure coefficients of the S0, R0, P0, S02, and R02 emission lines related to the neutral nitrogen donor bound excitons were determined. The pressure coefficient of the indirect gap of 6H-Sic deduced from the P0 line turns out to be +2.0 ...


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Item type:Article
Institutions:Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Ulrich Rössler
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Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:1396
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