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Theoretical study of interacting hole gas in p-doped bulk III-V semiconductors

URN to cite this document:
urn:nbn:de:bvb:355-epub-17891
DOI to cite this document:
10.5283/epub.1789
Schliemann, John
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Date of publication of this fulltext: 05 Aug 2009 13:32



Abstract

We study the homogeneous interacting hole gas in $p$-doped bulk III-V semiconductors. The structure of the valence band is modelled by Luttinger's Hamiltonian in the spherical approximation, giving rise to heavy and light hole dispersion branches, and the Coulomb repulsion is taken into account via a self-consistent Hartree-Fock treatment. As a nontrivial feature of the model, the self-consistent ...

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