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Conduction mechanism in granular Ru02-based thick-film resistors
Schoepe, Wilfried (1990) Conduction mechanism in granular Ru02-based thick-film resistors. Physica B: Condensed Matter 165-16, pp. 299-300.Date of publication of this fulltext: 20 Dec 2010 14:09
Article
DOI to cite this document: 10.5283/epub.18825
Abstract
The conductivity of a commercial thick-film resistor is measured between 4 K and 15 mK and in magnetic fields up to 7 Tesla. The data can be described by the variable-range hopping mechanism with a Coulomb gap in the density of states. The negative magnetoresistance may be attributed to quantum-interference effects in the strongly localized regime.
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| Item type | Article | ||||
| Journal or Publication Title | Physica B: Condensed Matter | ||||
| Publisher: | Elsevier | ||||
|---|---|---|---|---|---|
| Volume: | 165-16 | ||||
| Page Range: | pp. 299-300 | ||||
| Date | 1990 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Prof. Wilfried Schoepe | ||||
| Identification Number |
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| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Unknown | ||||
| Created at the University of Regensburg | Unknown | ||||
| URN of the UB Regensburg | urn:nbn:de:bvb:355-epub-188256 | ||||
| Item ID | 18825 |
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