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Conduction mechanism in granular Ru02-based thick-film resistors

Schoepe, Wilfried (1990) Conduction mechanism in granular Ru02-based thick-film resistors. Physica B: Condensed Matter 165-16, pp. 299-300.

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Abstract

The conductivity of a commercial thick-film resistor is measured between 4 K and 15 mK and in magnetic fields up to 7 Tesla. The data can be described by the variable-range hopping mechanism with a Coulomb gap in the density of states. The negative magnetoresistance may be attributed to quantum-interference effects in the strongly localized regime.


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Item type:Article
Date:1990
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Prof. Wilfried Schoepe
Identification Number:
ValueType
10.1016/S0921-4526(90)80999-YDOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:18825
Owner only: item control page

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