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Conduction mechanism in granular Ru02-based thick-film resistors

URN to cite this document:
urn:nbn:de:bvb:355-epub-188256
DOI to cite this document:
10.5283/epub.18825
Schoepe, Wilfried
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Date of publication of this fulltext: 20 Dec 2010 14:09


Abstract

The conductivity of a commercial thick-film resistor is measured between 4 K and 15 mK and in magnetic fields up to 7 Tesla. The data can be described by the variable-range hopping mechanism with a Coulomb gap in the density of states. The negative magnetoresistance may be attributed to quantum-interference effects in the strongly localized regime.


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